ESH2DHE3_A/I Pricing (USD) [582905pcs Stock]
- 1 pcs$0.06345
- 6,400 pcs$0.05751
- Part Number:
- ESH2DHE3_A/I
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Detailed description:
- DIODE GEN PURP 200V 2A DO214AA. Rectifiers 2A,200V,25ns SMB, UF Rect, SMD
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Single, Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Diodes - Zener - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - TRIACs and Transistors - FETs, MOSFETs - RF ...
- Competitive Advantage:
- We specialize in Vishay Semiconductor Diodes Division ESH2DHE3_A/I electronic components. ESH2DHE3_A/I can be shipped within 24 hours after order. If you have any demands for ESH2DHE3_A/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
ESH2DHE3_A/I Product Attributes
Part Number :
ESH2DHE3_A/I
Manufacturer :
Vishay Semiconductor Diodes Division
Description :
DIODE GEN PURP 200V 2A DO214AA
Series :
Automotive, AEC-Q101
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
200V
Current - Average Rectified (Io) :
2A
Voltage - Forward (Vf) (Max) @ If :
930mV @ 2A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
25ns
Current - Reverse Leakage @ Vr :
2µA @ 200V
Capacitance @ Vr, F :
30pF @ 4V, 1MHz
Mounting Type :
Surface Mount
Package / Case :
DO-214AA, SMB
Supplier Device Package :
DO-214AA (SMB)
Operating Temperature - Junction :
-55°C ~ 175°C
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