Infineon Technologies - SIDC105D120H8X1SA1

KEY Part #: K6431142

SIDC105D120H8X1SA1 Pricing (USD) [6845pcs Stock]

  • 1 pcs$6.01996

Part Number:
SIDC105D120H8X1SA1
Manufacturer:
Infineon Technologies
Detailed description:
DIODE GEN PURP 1.2KV 200A WAFER.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Power Driver Modules, Transistors - IGBTs - Arrays, Diodes - RF, Transistors - Bipolar (BJT) - Single, Diodes - Bridge Rectifiers, Transistors - FETs, MOSFETs - Single and Transistors - Programmable Unijunction ...
Competitive Advantage:
We specialize in Infineon Technologies SIDC105D120H8X1SA1 electronic components. SIDC105D120H8X1SA1 can be shipped within 24 hours after order. If you have any demands for SIDC105D120H8X1SA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIDC105D120H8X1SA1 Product Attributes

Part Number : SIDC105D120H8X1SA1
Manufacturer : Infineon Technologies
Description : DIODE GEN PURP 1.2KV 200A WAFER
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 1200V
Current - Average Rectified (Io) : 200A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.41V @ 45A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 27µA @ 1200V
Capacitance @ Vr, F : -
Mounting Type : Surface Mount
Package / Case : Die
Supplier Device Package : Sawn on foil
Operating Temperature - Junction : -40°C ~ 175°C

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