Infineon Technologies - FF6MR12W2M1B11BOMA1

KEY Part #: K6522798

FF6MR12W2M1B11BOMA1 Pricing (USD) [291pcs Stock]

  • 1 pcs$158.99959

Part Number:
FF6MR12W2M1B11BOMA1
Manufacturer:
Infineon Technologies
Detailed description:
MOSFET MODULE 1200V 200A.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Diodes - RF, Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Thyristors - TRIACs, Diodes - Variable Capacitance (Varicaps, Varactors) and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in Infineon Technologies FF6MR12W2M1B11BOMA1 electronic components. FF6MR12W2M1B11BOMA1 can be shipped within 24 hours after order. If you have any demands for FF6MR12W2M1B11BOMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FF6MR12W2M1B11BOMA1 Product Attributes

Part Number : FF6MR12W2M1B11BOMA1
Manufacturer : Infineon Technologies
Description : MOSFET MODULE 1200V 200A
Series : CoolSiC™
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) : 1200V
Current - Continuous Drain (Id) @ 25°C : 200A (Tj)
Rds On (Max) @ Id, Vgs : 5.63 mOhm @ 200A, 15V
Vgs(th) (Max) @ Id : 5.55V @ 10mA
Gate Charge (Qg) (Max) @ Vgs : 496nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds : 14700pF @ 800V
Power - Max : 20mW (Tc)
Operating Temperature : -40°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : Module
Supplier Device Package : AG-EASY2BM-2

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