BSH205G2VL Pricing (USD) [1250285pcs Stock]
- 1 pcs$0.02973
- 10,000 pcs$0.02958
- Part Number:
- BSH205G2VL
- Manufacturer:
- Nexperia USA Inc.
- Detailed description:
- MOSFET P-CH 20V 2.3A TO236AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Thyristors - SCRs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - RF, Diodes - Rectifiers - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Single and Transistors - Special Purpose ...
- Competitive Advantage:
- We specialize in Nexperia USA Inc. BSH205G2VL electronic components. BSH205G2VL can be shipped within 24 hours after order. If you have any demands for BSH205G2VL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSH205G2VL Product Attributes
Part Number :
BSH205G2VL
Manufacturer :
Nexperia USA Inc.
Description :
MOSFET P-CH 20V 2.3A TO236AB
Series :
Automotive, AEC-Q101
Part Status :
Active
FET Type :
P-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
20V
Current - Continuous Drain (Id) @ 25°C :
2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, Vgs :
170 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id :
950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
6.5nC @ 4.5V
Vgs (Max) :
±8V
Input Capacitance (Ciss) (Max) @ Vds :
418pF @ 10V
FET Feature :
-
Power Dissipation (Max) :
480mW (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-236AB
Package / Case :
TO-236-3, SC-59, SOT-23-3
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