IRFP4137PBF Pricing (USD) [12689pcs Stock]
- 1 pcs$3.11575
- 10 pcs$2.78214
- 100 pcs$2.28133
- 500 pcs$1.84731
- 1,000 pcs$1.55797
- Part Number:
- IRFP4137PBF
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET N-CH 300V 38A TO-247AC.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Bridge Rectifiers, Diodes - Rectifiers - Arrays, Transistors - JFETs, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Modules, Transistors - IGBTs - Single and Thyristors - TRIACs ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRFP4137PBF electronic components. IRFP4137PBF can be shipped within 24 hours after order. If you have any demands for IRFP4137PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFP4137PBF Product Attributes
Part Number :
IRFP4137PBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 300V 38A TO-247AC
Series :
HEXFET®
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
300V
Current - Continuous Drain (Id) @ 25°C :
38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
69 mOhm @ 24A, 10V
Vgs(th) (Max) @ Id :
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
125nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
5168pF @ 50V
FET Feature :
-
Power Dissipation (Max) :
341W (Tc)
Operating Temperature :
-55°C ~ 175°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-247AC
Package / Case :
TO-247-3
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