Vishay Siliconix - IRFBC30APBF

KEY Part #: K6393006

IRFBC30APBF Pricing (USD) [55732pcs Stock]

  • 1 pcs$1.48957
  • 10 pcs$1.34369
  • 100 pcs$1.02447
  • 500 pcs$0.79680
  • 1,000 pcs$0.66020

Part Number:
IRFBC30APBF
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 600V 3.6A TO-220AB.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Thyristors - SCRs - Modules, Transistors - IGBTs - Single, Transistors - Programmable Unijunction, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers - Arrays and Diodes - Rectifiers - Single ...
Competitive Advantage:
We specialize in Vishay Siliconix IRFBC30APBF electronic components. IRFBC30APBF can be shipped within 24 hours after order. If you have any demands for IRFBC30APBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFBC30APBF Product Attributes

Part Number : IRFBC30APBF
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 600V 3.6A TO-220AB
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Current - Continuous Drain (Id) @ 25°C : 3.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.2 Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id : 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 23nC @ 10V
Vgs (Max) : ±30V
Input Capacitance (Ciss) (Max) @ Vds : 510pF @ 25V
FET Feature : -
Power Dissipation (Max) : 74W (Tc)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : TO-220AB
Package / Case : TO-220-3