Toshiba Semiconductor and Storage - HN1B04FU-Y(T5L,F,T

KEY Part #: K6391533

[6487pcs Stock]


    Part Number:
    HN1B04FU-Y(T5L,F,T
    Manufacturer:
    Toshiba Semiconductor and Storage
    Detailed description:
    TRANS NPN/PNP 50V 0.15A US6.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Power Driver Modules, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Diodes - Zener - Single, Diodes - Rectifiers - Single, Diodes - Variable Capacitance (Varicaps, Varactors) and Transistors - Special Purpose ...
    Competitive Advantage:
    We specialize in Toshiba Semiconductor and Storage HN1B04FU-Y(T5L,F,T electronic components. HN1B04FU-Y(T5L,F,T can be shipped within 24 hours after order. If you have any demands for HN1B04FU-Y(T5L,F,T, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    HN1B04FU-Y(T5L,F,T Product Attributes

    Part Number : HN1B04FU-Y(T5L,F,T
    Manufacturer : Toshiba Semiconductor and Storage
    Description : TRANS NPN/PNP 50V 0.15A US6
    Series : -
    Part Status : Active
    Transistor Type : NPN, PNP
    Current - Collector (Ic) (Max) : 150mA
    Voltage - Collector Emitter Breakdown (Max) : 50V
    Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
    Current - Collector Cutoff (Max) : 100nA (ICBO)
    DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
    Power - Max : 200mW
    Frequency - Transition : 150MHz
    Operating Temperature : 125°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : 6-TSSOP, SC-88, SOT-363
    Supplier Device Package : US6

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