Microsemi Corporation - APT150GT120JR

KEY Part #: K6532574

APT150GT120JR Pricing (USD) [1738pcs Stock]

  • 1 pcs$24.91627
  • 10 pcs$23.29982
  • 25 pcs$21.54901
  • 100 pcs$20.20220

Part Number:
APT150GT120JR
Manufacturer:
Microsemi Corporation
Detailed description:
IGBT 1200V 170A 830W SOT227.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs - Modules, Transistors - Special Purpose, Diodes - Zener - Single, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Arrays, Diodes - Rectifiers - Arrays, Diodes - RF and Diodes - Zener - Arrays ...
Competitive Advantage:
We specialize in Microsemi Corporation APT150GT120JR electronic components. APT150GT120JR can be shipped within 24 hours after order. If you have any demands for APT150GT120JR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT150GT120JR Product Attributes

Part Number : APT150GT120JR
Manufacturer : Microsemi Corporation
Description : IGBT 1200V 170A 830W SOT227
Series : Thunderbolt IGBT®
Part Status : Active
IGBT Type : NPT
Configuration : Single
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 170A
Power - Max : 830W
Vce(on) (Max) @ Vge, Ic : 3.7V @ 15V, 150A
Current - Collector Cutoff (Max) : 150µA
Input Capacitance (Cies) @ Vce : 9.3nF @ 25V
Input : Standard
NTC Thermistor : No
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : ISOTOP
Supplier Device Package : ISOTOP®

You May Also Be Interested In
  • VS-ENQ030L120S

    Vishay Semiconductor Diodes Division

    IGBT 1200V 61A 216W EMIPAK-1B. Rectifiers 30A Neutral Point Clamp Topology

  • VS-ETF150Y65N

    Vishay Semiconductor Diodes Division

    IGBT 650V 150A EMIPAK-2B.

  • CPV362M4F

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 8.8A IMS-2.

  • CPV363M4K

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 6A IMS-2.

  • A2C35S12M3

    STMicroelectronics

    IGBT TRENCH 1200V 35A ACEPACK2.

  • A2C25S12M3

    STMicroelectronics

    IGBT TRENCH 1200V 25A ACEPACK2.