Toshiba Semiconductor and Storage - TRS8E65C,S1Q

KEY Part #: K6429797

TRS8E65C,S1Q Pricing (USD) [12497pcs Stock]

  • 1 pcs$4.22191

Part Number:
TRS8E65C,S1Q
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
DIODE SCHOTTKY 650V 8A TO220-2L.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - Arrays, Transistors - IGBTs - Arrays, Diodes - Zener - Single, Thyristors - SCRs, Thyristors - SCRs - Modules and Diodes - Rectifiers - Single ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage TRS8E65C,S1Q electronic components. TRS8E65C,S1Q can be shipped within 24 hours after order. If you have any demands for TRS8E65C,S1Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TRS8E65C,S1Q Product Attributes

Part Number : TRS8E65C,S1Q
Manufacturer : Toshiba Semiconductor and Storage
Description : DIODE SCHOTTKY 650V 8A TO220-2L
Series : -
Part Status : Active
Diode Type : Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) : 650V
Current - Average Rectified (Io) : 8A (DC)
Voltage - Forward (Vf) (Max) @ If : 1.7V @ 8A
Speed : No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) : 0ns
Current - Reverse Leakage @ Vr : 90µA @ 650V
Capacitance @ Vr, F : 44pF @ 650V, 1MHz
Mounting Type : Through Hole
Package / Case : TO-220-2
Supplier Device Package : TO-220-2L
Operating Temperature - Junction : 175°C (Max)

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