Toshiba Semiconductor and Storage - HN4A51JTE85LF

KEY Part #: K6391278

HN4A51JTE85LF Pricing (USD) [719727pcs Stock]

  • 1 pcs$0.05165
  • 3,000 pcs$0.05139

Part Number:
HN4A51JTE85LF
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
TRANS 2PNP 120V 0.1A SMV.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Transistors - IGBTs - Single, Thyristors - SCRs, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage HN4A51JTE85LF electronic components. HN4A51JTE85LF can be shipped within 24 hours after order. If you have any demands for HN4A51JTE85LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HN4A51JTE85LF Product Attributes

Part Number : HN4A51JTE85LF
Manufacturer : Toshiba Semiconductor and Storage
Description : TRANS 2PNP 120V 0.1A SMV
Series : -
Part Status : Active
Transistor Type : 2 PNP (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 120V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 300mW
Frequency - Transition : 100MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-74A, SOT-753
Supplier Device Package : SMV

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