Vishay Semiconductor Diodes Division - P600J-E3/73

KEY Part #: K6446276

P600J-E3/73 Pricing (USD) [181241pcs Stock]

  • 1 pcs$0.20408
  • 2,700 pcs$0.10736

Part Number:
P600J-E3/73
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 600V 6A P600. Rectifiers 6.0 Amp 600 Volt 400 Amp IFSM
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Arrays, Transistors - IGBTs - Modules, Thyristors - SCRs, Transistors - IGBTs - Arrays and Transistors - Bipolar (BJT) - RF ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division P600J-E3/73 electronic components. P600J-E3/73 can be shipped within 24 hours after order. If you have any demands for P600J-E3/73, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

P600J-E3/73 Product Attributes

Part Number : P600J-E3/73
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 600V 6A P600
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Current - Average Rectified (Io) : 6A
Voltage - Forward (Vf) (Max) @ If : 900mV @ 6A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 2.5µs
Current - Reverse Leakage @ Vr : 5µA @ 600V
Capacitance @ Vr, F : 150pF @ 4V, 1MHz
Mounting Type : Through Hole
Package / Case : P600, Axial
Supplier Device Package : P600
Operating Temperature - Junction : -50°C ~ 150°C

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