HN4C51J(TE85L,F) Pricing (USD) [719727pcs Stock]
- 1 pcs$0.05139
- Part Number:
- HN4C51J(TE85L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- TRANS 2NPN 120V 0.1A SMV.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Single, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Arrays and Transistors - Programmable Unijunction ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage HN4C51J(TE85L,F) electronic components. HN4C51J(TE85L,F) can be shipped within 24 hours after order. If you have any demands for HN4C51J(TE85L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HN4C51J(TE85L,F) Product Attributes
Part Number :
HN4C51J(TE85L,F)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
TRANS 2NPN 120V 0.1A SMV
Series :
-
Part Status :
Active
Transistor Type :
2 NPN (Dual) Common Base
Current - Collector (Ic) (Max) :
100mA
Voltage - Collector Emitter Breakdown (Max) :
120V
Vce Saturation (Max) @ Ib, Ic :
300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) :
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 2mA, 6V
Power - Max :
300mW
Frequency - Transition :
100MHz
Operating Temperature :
150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
SC-74A, SOT-753
Supplier Device Package :
SMV
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