TK46E08N1,S1X Pricing (USD) [2044pcs Stock]
- 1 pcs$0.64806
- Part Number:
- TK46E08N1,S1X
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 80V 80A TO-220.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Diodes - RF, Transistors - JFETs, Transistors - IGBTs - Arrays, Transistors - FETs, MOSFETs - RF, Power Driver Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased and Diodes - Bridge Rectifiers ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK46E08N1,S1X electronic components. TK46E08N1,S1X can be shipped within 24 hours after order. If you have any demands for TK46E08N1,S1X, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK46E08N1,S1X Product Attributes
Part Number :
TK46E08N1,S1X
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 80V 80A TO-220
Series :
U-MOSVIII-H
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
80V
Current - Continuous Drain (Id) @ 25°C :
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
8.4 mOhm @ 23A, 10V
Vgs(th) (Max) @ Id :
4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs :
37nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
2500pF @ 40V
FET Feature :
-
Power Dissipation (Max) :
103W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
TO-220
Package / Case :
TO-220-3
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