CMF03(TE12L,Q,M) Pricing (USD) [644086pcs Stock]
- 1 pcs$0.05743
- Part Number:
- CMF03(TE12L,Q,M)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- DIODE GEN PURP 900V 500MA M-FLAT. Diodes - General Purpose, Power, Switching 900V 1A M-FLAT
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - JFETs, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Arrays, Diodes - Zener - Single, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single and Diodes - Variable Capacitance (Varicaps, Varactors) ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage CMF03(TE12L,Q,M) electronic components. CMF03(TE12L,Q,M) can be shipped within 24 hours after order. If you have any demands for CMF03(TE12L,Q,M), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
CMF03(TE12L,Q,M) Product Attributes
Part Number :
CMF03(TE12L,Q,M)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
DIODE GEN PURP 900V 500MA M-FLAT
Series :
-
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
900V
Current - Average Rectified (Io) :
500mA
Voltage - Forward (Vf) (Max) @ If :
2.5V @ 500mA
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
100ns
Current - Reverse Leakage @ Vr :
50µA @ 900V
Capacitance @ Vr, F :
-
Mounting Type :
Surface Mount
Package / Case :
SOD-128
Supplier Device Package :
M-FLAT (2.4x3.8)
Operating Temperature - Junction :
-40°C ~ 125°C
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