APT25GP120BDQ1G Pricing (USD) [6830pcs Stock]
- 1 pcs$6.03318
- 10 pcs$5.48451
- 25 pcs$5.07316
- 100 pcs$4.66186
- 250 pcs$4.25050
- 500 pcs$3.97628
- Part Number:
- APT25GP120BDQ1G
- Manufacturer:
- Microsemi Corporation
- Detailed description:
- IGBT 1200V 69A 417W TO247.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Diodes - Zener - Arrays, Transistors - IGBTs - Modules, Diodes - RF, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - JFETs and Power Driver Modules ...
- Competitive Advantage:
- We specialize in Microsemi Corporation APT25GP120BDQ1G electronic components. APT25GP120BDQ1G can be shipped within 24 hours after order. If you have any demands for APT25GP120BDQ1G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT25GP120BDQ1G Product Attributes
Part Number :
APT25GP120BDQ1G
Manufacturer :
Microsemi Corporation
Description :
IGBT 1200V 69A 417W TO247
Series :
POWER MOS 7®
Part Status :
Active
IGBT Type :
PT
Voltage - Collector Emitter Breakdown (Max) :
1200V
Current - Collector (Ic) (Max) :
69A
Current - Collector Pulsed (Icm) :
90A
Vce(on) (Max) @ Vge, Ic :
3.9V @ 15V, 25A
Power - Max :
417W
Switching Energy :
500µJ (on), 440µJ (off)
Input Type :
Standard
Gate Charge :
110nC
Td (on/off) @ 25°C :
12ns/70ns
Test Condition :
600V, 25A, 5 Ohm, 15V
Reverse Recovery Time (trr) :
-
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Package / Case :
TO-247-3
Supplier Device Package :
TO-247 [B]
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