Taiwan Semiconductor Corporation - TSM200N03DPQ33 RGG

KEY Part #: K6525482

TSM200N03DPQ33 RGG Pricing (USD) [536583pcs Stock]

  • 1 pcs$0.06893

Part Number:
TSM200N03DPQ33 RGG
Manufacturer:
Taiwan Semiconductor Corporation
Detailed description:
MOSFET 2 N-CH 30V 20A 8PDFN.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Transistors - Bipolar (BJT) - Single, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs - Modules, Diodes - Rectifiers - Single and Transistors - IGBTs - Modules ...
Competitive Advantage:
We specialize in Taiwan Semiconductor Corporation TSM200N03DPQ33 RGG electronic components. TSM200N03DPQ33 RGG can be shipped within 24 hours after order. If you have any demands for TSM200N03DPQ33 RGG, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TSM200N03DPQ33 RGG Product Attributes

Part Number : TSM200N03DPQ33 RGG
Manufacturer : Taiwan Semiconductor Corporation
Description : MOSFET 2 N-CH 30V 20A 8PDFN
Series : -
Part Status : Active
FET Type : 2 N-Channel (Dual)
FET Feature : Standard
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 20A (Tc)
Rds On (Max) @ Id, Vgs : 20 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 345pF @ 25V
Power - Max : 20W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 8-PowerWDFN
Supplier Device Package : 8-PDFN (3x3)