Microsemi Corporation - JAN1N5802US

KEY Part #: K6426959

JAN1N5802US Pricing (USD) [7195pcs Stock]

1 pcs$5.72756
100 pcs$5.14244

Part Number:: JAN1N5802US

Manufacturer:: Microsemi Corporation

Detailed description:: DIODE GEN PURP 50V 2.5A D5A. ESD Suppressors / TVS Diodes DIODE 1A 50V TRR 25NS

Manufacturer's standard lead time:: In stock

Shelf life:: One Year

Chip From:: Hong Kong

RoHS:

Payment method:

Shipment way:

Family Categories:: KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - RF, Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Single, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Arrays, Diodes - Rectifiers - Single and Transistors - Bipolar (BJT) - Single ...

Competitive Advantage:: We specialize in Microsemi Corporation JAN1N5802US electronic components. JAN1N5802US can be shipped within 24 hours after order. If you have any demands for JAN1N5802US, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

JAN1N5802US Product Attributes

Part Number : JAN1N5802US

Manufacturer : Microsemi Corporation

Description : DIODE GEN PURP 50V 2.5A D5A

Series : Military, MIL-PRF-19500/477

Part Status : Active

Diode Type : Standard

Voltage - DC Reverse (Vr) (Max) : 50V

Current - Average Rectified (Io) : 2.5A

Voltage - Forward (Vf) (Max) @ If : 975mV @ 2.5A

Speed : Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr) : 25ns

Current - Reverse Leakage @ Vr : 1µA @ 50V

Capacitance @ Vr, F : 25pF @ 10V, 1MHz

Mounting Type : Surface Mount

Package / Case : SQ-MELF, A

Supplier Device Package : D-5A

Operating Temperature - Junction : -65°C ~ 175°C

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