Vishay Semiconductor Diodes Division - P600M-E3/54

KEY Part #: K6435605

P600M-E3/54 Pricing (USD) [235208pcs Stock]

  • 1 pcs$0.15725
  • 800 pcs$0.14809
  • 1,600 pcs$0.11847
  • 2,400 pcs$0.10736
  • 5,600 pcs$0.09996
  • 20,000 pcs$0.09872

Part Number:
P600M-E3/54
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 1KV 6A P600. Rectifiers 6.0 Amp 1000 Volt 400 Amp IFSM
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - Bridge Rectifiers, Thyristors - SCRs - Modules, Thyristors - DIACs, SIDACs, Diodes - Zener - Arrays, Thyristors - TRIACs and Transistors - IGBTs - Modules ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division P600M-E3/54 electronic components. P600M-E3/54 can be shipped within 24 hours after order. If you have any demands for P600M-E3/54, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

P600M-E3/54 Product Attributes

Part Number : P600M-E3/54
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 1KV 6A P600
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 1000V
Current - Average Rectified (Io) : 6A
Voltage - Forward (Vf) (Max) @ If : 1V @ 6A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 2.5µs
Current - Reverse Leakage @ Vr : 5µA @ 1000V
Capacitance @ Vr, F : 150pF @ 4V, 1MHz
Mounting Type : Through Hole
Package / Case : P600, Axial
Supplier Device Package : P600
Operating Temperature - Junction : -50°C ~ 150°C

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