ON Semiconductor - NSBC123JPDXV6T5G

KEY Part #: K6528905

NSBC123JPDXV6T5G Pricing (USD) [1344664pcs Stock]

  • 1 pcs$0.02751
  • 16,000 pcs$0.02445

Part Number:
NSBC123JPDXV6T5G
Manufacturer:
ON Semiconductor
Detailed description:
TRANS PREBIAS NPN/PNP SOT563.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Diodes - Zener - Arrays, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Rectifiers - Single and Thyristors - SCRs ...
Competitive Advantage:
We specialize in ON Semiconductor NSBC123JPDXV6T5G electronic components. NSBC123JPDXV6T5G can be shipped within 24 hours after order. If you have any demands for NSBC123JPDXV6T5G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

NSBC123JPDXV6T5G Product Attributes

Part Number : NSBC123JPDXV6T5G
Manufacturer : ON Semiconductor
Description : TRANS PREBIAS NPN/PNP SOT563
Series : -
Part Status : Active
Transistor Type : 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 2.2 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : -
Power - Max : 500mW
Mounting Type : Surface Mount
Package / Case : SOT-563, SOT-666
Supplier Device Package : SOT-563