SIZF920DT-T1-GE3 Pricing (USD) [102903pcs Stock]
- 1 pcs$0.37998
- Part Number:
- SIZF920DT-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET DL N-CH 30V POWERPAIR 6X5.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Power Driver Modules, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Single, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Diodes - Rectifiers - Arrays and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SIZF920DT-T1-GE3 electronic components. SIZF920DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZF920DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZF920DT-T1-GE3 Product Attributes
Part Number :
SIZF920DT-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET DL N-CH 30V POWERPAIR 6X5
Series :
TrenchFET® Gen IV
Part Status :
Active
FET Type :
2 N-Channel (Dual), Schottky
FET Feature :
Standard
Drain to Source Voltage (Vdss) :
30V
Current - Continuous Drain (Id) @ 25°C :
28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)
Rds On (Max) @ Id, Vgs :
3.07 mOhm @ 10A, 10V, 1.05 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id :
2.4V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V, 125nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
1300pF @ 15V, 5230pF @ 15V
Power - Max :
3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
8-PowerWDFN
Supplier Device Package :
8-PowerPair® (6x5)
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