TK10Q60W,S1VQ Pricing (USD) [33884pcs Stock]
- 1 pcs$1.33973
- Part Number:
- TK10Q60W,S1VQ
- Manufacturer:
- Toshiba Semiconductor and Storage
- Detailed description:
- MOSFET N-CH 600V 9.7A IPAK.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs - Modules, Transistors - Special Purpose, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Single and Thyristors - TRIACs ...
- Competitive Advantage:
- We specialize in Toshiba Semiconductor and Storage TK10Q60W,S1VQ electronic components. TK10Q60W,S1VQ can be shipped within 24 hours after order. If you have any demands for TK10Q60W,S1VQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK10Q60W,S1VQ Product Attributes
Part Number :
TK10Q60W,S1VQ
Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 600V 9.7A IPAK
Series :
DTMOSIV
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Current - Continuous Drain (Id) @ 25°C :
9.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
430 mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id :
3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs :
20nC @ 10V
Vgs (Max) :
±30V
Input Capacitance (Ciss) (Max) @ Vds :
700pF @ 300V
FET Feature :
-
Power Dissipation (Max) :
80W (Tc)
Operating Temperature :
150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
I-PAK
Package / Case :
TO-251-3 Stub Leads, IPak
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