Vishay Siliconix - SIZ904DT-T1-GE3

KEY Part #: K6522050

SIZ904DT-T1-GE3 Pricing (USD) [168713pcs Stock]

  • 1 pcs$0.21923
  • 3,000 pcs$0.20587

Part Number:
SIZ904DT-T1-GE3
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET 2N-CH 30V 12A POWERPAIR.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Thyristors - DIACs, SIDACs, Transistors - IGBTs - Single, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - RF, Transistors - Bipolar (BJT) - RF and Diodes - Bridge Rectifiers ...
Competitive Advantage:
We specialize in Vishay Siliconix SIZ904DT-T1-GE3 electronic components. SIZ904DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ904DT-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIZ904DT-T1-GE3 Product Attributes

Part Number : SIZ904DT-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET 2N-CH 30V 12A POWERPAIR
Series : TrenchFET®
Part Status : Active
FET Type : 2 N-Channel (Half Bridge)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V
Current - Continuous Drain (Id) @ 25°C : 12A, 16A
Rds On (Max) @ Id, Vgs : 24 mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id : 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds : 435pF @ 15V
Power - Max : 20W, 33W
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-PowerPair™
Supplier Device Package : 6-PowerPair™