Toshiba Semiconductor and Storage - 1SS307(TE85L,F)

KEY Part #: K6431394

1SS307(TE85L,F) Pricing (USD) [914187pcs Stock]

  • 1 pcs$0.04046

Part Number:
1SS307(TE85L,F)
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
DIODE GEN PURP 30V 100MA SMINI. Diodes - General Purpose, Power, Switching Switching diode, 30V 3 pins, S-Mini 0.1A
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - IGBTs - Arrays, Diodes - Zener - Arrays, Power Driver Modules, Transistors - IGBTs - Single, Transistors - Programmable Unijunction, Transistors - IGBTs - Modules and Transistors - FETs, MOSFETs - Arrays ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage 1SS307(TE85L,F) electronic components. 1SS307(TE85L,F) can be shipped within 24 hours after order. If you have any demands for 1SS307(TE85L,F), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1SS307(TE85L,F) Product Attributes

Part Number : 1SS307(TE85L,F)
Manufacturer : Toshiba Semiconductor and Storage
Description : DIODE GEN PURP 30V 100MA SMINI
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 30V
Current - Average Rectified (Io) : 100mA
Voltage - Forward (Vf) (Max) @ If : 1.3V @ 100mA
Speed : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 10µA @ 30V
Capacitance @ Vr, F : 6pF @ 0V, 1MHz
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : S-Mini
Operating Temperature - Junction : 125°C (Max)

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