GeneSiC Semiconductor - 1N3211

KEY Part #: K6425062

1N3211 Pricing (USD) [12474pcs Stock]

  • 1 pcs$3.30352
  • 100 pcs$2.38635

Part Number:
1N3211
Manufacturer:
GeneSiC Semiconductor
Detailed description:
DIODE GEN PURP 300V 15A DO5. Rectifiers 300V 15A Std. Recovery
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Modules, Diodes - Zener - Arrays, Diodes - Bridge Rectifiers, Diodes - Rectifiers - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - FETs, MOSFETs - Arrays, Transistors - JFETs and Diodes - Rectifiers - Single ...
Competitive Advantage:
We specialize in GeneSiC Semiconductor 1N3211 electronic components. 1N3211 can be shipped within 24 hours after order. If you have any demands for 1N3211, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N3211 Product Attributes

Part Number : 1N3211
Manufacturer : GeneSiC Semiconductor
Description : DIODE GEN PURP 300V 15A DO5
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 300V
Current - Average Rectified (Io) : 15A
Voltage - Forward (Vf) (Max) @ If : 1.5V @ 15A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 10µA @ 50V
Capacitance @ Vr, F : -
Mounting Type : Chassis, Stud Mount
Package / Case : DO-203AB, DO-5, Stud
Supplier Device Package : DO-5
Operating Temperature - Junction : -65°C ~ 175°C
You May Also Be Interested In
  • FGD3N60UNDF

    ON Semiconductor

    IGBT 600V 6A 60W DPAK.

  • BAS40E6433HTMA1

    Infineon Technologies

    DIODE SCHOTTKY 40V 120MA SOT23-3.

  • LXA06B600

    Power Integrations

    DIODE GEN PURP 600V 6A TO263AB. Rectifiers X-Series 600V 6A Low Qrr

  • QH05BZ600

    Power Integrations

    DIODE GEN PURP 600V 5A TO263AB. Diodes - General Purpose, Power, Switching Super-Low Qrr. 600V, 5A, Rectifier

  • QH08BZ600

    Power Integrations

    DIODE GEN PURP 600V 8A TO263AB. Diodes - General Purpose, Power, Switching Super-Low Qrr. 600V, 8A, Rectifier

  • VS-20ETS08SPBF

    Vishay Semiconductor Diodes Division

    DIODE GEN PURP 800V 20A TO263AB.