Toshiba Semiconductor and Storage - HN1B01FU-GR,LF

KEY Part #: K6391296

HN1B01FU-GR,LF Pricing (USD) [1548880pcs Stock]

  • 1 pcs$0.02400
  • 3,000 pcs$0.02388

Part Number:
HN1B01FU-GR,LF
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
TRANS NPN/PNP 50V 0.15A US6-PLN.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - TRIACs, Transistors - FETs, MOSFETs - RF, Transistors - IGBTs - Modules, Diodes - Zener - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Single, Power Driver Modules and Transistors - IGBTs - Single ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage HN1B01FU-GR,LF electronic components. HN1B01FU-GR,LF can be shipped within 24 hours after order. If you have any demands for HN1B01FU-GR,LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HN1B01FU-GR,LF Product Attributes

Part Number : HN1B01FU-GR,LF
Manufacturer : Toshiba Semiconductor and Storage
Description : TRANS NPN/PNP 50V 0.15A US6-PLN
Series : -
Part Status : Active
Transistor Type : NPN, PNP
Current - Collector (Ic) (Max) : 150mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 6V
Power - Max : 200mW, 210mW
Frequency - Transition : 150MHz
Operating Temperature : 125°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-TSSOP, SC-88, SOT-363
Supplier Device Package : US6

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