Toshiba Semiconductor and Storage - HN1C03F-B(TE85L,F)

KEY Part #: K6391694

HN1C03F-B(TE85L,F) Pricing (USD) [617873pcs Stock]

  • 1 pcs$0.05986

Part Number:
HN1C03F-B(TE85L,F)
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
TRANS 2NPN 20V 0.3A SM6.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Diodes - Rectifiers - Single, Transistors - Special Purpose, Transistors - Bipolar (BJT) - Single, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - RF, Transistors - JFETs and Transistors - Programmable Unijunction ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage HN1C03F-B(TE85L,F) electronic components. HN1C03F-B(TE85L,F) can be shipped within 24 hours after order. If you have any demands for HN1C03F-B(TE85L,F), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HN1C03F-B(TE85L,F) Product Attributes

Part Number : HN1C03F-B(TE85L,F)
Manufacturer : Toshiba Semiconductor and Storage
Description : TRANS 2NPN 20V 0.3A SM6
Series : -
Part Status : Active
Transistor Type : 2 NPN (Dual)
Current - Collector (Ic) (Max) : 300mA
Voltage - Collector Emitter Breakdown (Max) : 20V
Vce Saturation (Max) @ Ib, Ic : 100mV @ 3mA, 30mA
Current - Collector Cutoff (Max) : 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce : 350 @ 4mA, 2V
Power - Max : 300mW
Frequency - Transition : 30MHz
Operating Temperature : 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : SC-74, SOT-457
Supplier Device Package : SM6

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