ON Semiconductor - NTLJD3115PT1G

KEY Part #: K6521883

NTLJD3115PT1G Pricing (USD) [432588pcs Stock]

  • 1 pcs$0.08550
  • 3,000 pcs$0.08146

Part Number:
NTLJD3115PT1G
Manufacturer:
ON Semiconductor
Detailed description:
MOSFET 2P-CH 20V 2.3A 6-WDFN.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - IGBTs - Arrays, Transistors - Programmable Unijunction, Diodes - Rectifiers - Single, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Special Purpose, Thyristors - SCRs - Modules and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in ON Semiconductor NTLJD3115PT1G electronic components. NTLJD3115PT1G can be shipped within 24 hours after order. If you have any demands for NTLJD3115PT1G, Please submit a Request for Quotation here or send us an email:
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ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
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NTLJD3115PT1G Product Attributes

Part Number : NTLJD3115PT1G
Manufacturer : ON Semiconductor
Description : MOSFET 2P-CH 20V 2.3A 6-WDFN
Series : -
Part Status : Active
FET Type : 2 P-Channel (Dual)
FET Feature : Logic Level Gate
Drain to Source Voltage (Vdss) : 20V
Current - Continuous Drain (Id) @ 25°C : 2.3A
Rds On (Max) @ Id, Vgs : 100 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 6.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds : 531pF @ 10V
Power - Max : 710mW
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : 6-WDFN Exposed Pad
Supplier Device Package : 6-WDFN (2x2)