Toshiba Semiconductor and Storage - SSM6N42FE(TE85L,F)

KEY Part #: K6523497

[4146pcs Stock]


    Part Number:
    SSM6N42FE(TE85L,F)
    Manufacturer:
    Toshiba Semiconductor and Storage
    Detailed description:
    MOSFET 2N-CH 20V 0.8A ES6.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Transistors - FETs, MOSFETs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - TRIACs, Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Single, Thyristors - SCRs and Thyristors - SCRs - Modules ...
    Competitive Advantage:
    We specialize in Toshiba Semiconductor and Storage SSM6N42FE(TE85L,F) electronic components. SSM6N42FE(TE85L,F) can be shipped within 24 hours after order. If you have any demands for SSM6N42FE(TE85L,F), Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SSM6N42FE(TE85L,F) Product Attributes

    Part Number : SSM6N42FE(TE85L,F)
    Manufacturer : Toshiba Semiconductor and Storage
    Description : MOSFET 2N-CH 20V 0.8A ES6
    Series : -
    Part Status : Obsolete
    FET Type : 2 N-Channel (Dual)
    FET Feature : Logic Level Gate
    Drain to Source Voltage (Vdss) : 20V
    Current - Continuous Drain (Id) @ 25°C : 800mA
    Rds On (Max) @ Id, Vgs : 240 mOhm @ 500mA, 4.5V
    Vgs(th) (Max) @ Id : 1V @ 1mA
    Gate Charge (Qg) (Max) @ Vgs : 2nC @ 4.5V
    Input Capacitance (Ciss) (Max) @ Vds : 90pF @ 10V
    Power - Max : 150mW
    Operating Temperature : 150°C (TJ)
    Mounting Type : Surface Mount
    Package / Case : SOT-563, SOT-666
    Supplier Device Package : ES6 (1.6x1.6)