SIZ322DT-T1-GE3 Pricing (USD) [252514pcs Stock]
- 1 pcs$0.14648
- Part Number:
- SIZ322DT-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET 2 N-CH 25V 30A 8-POWER33.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Diodes - Zener - Arrays, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - Bipolar (BJT) - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors) and Diodes - Zener - Single ...
- Competitive Advantage:
- We specialize in Vishay Siliconix SIZ322DT-T1-GE3 electronic components. SIZ322DT-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIZ322DT-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIZ322DT-T1-GE3 Product Attributes
Part Number :
SIZ322DT-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET 2 N-CH 25V 30A 8-POWER33
Series :
TrenchFET® Gen IV
Part Status :
Active
FET Type :
2 N-Channel (Dual)
FET Feature :
Standard
Drain to Source Voltage (Vdss) :
25V
Current - Continuous Drain (Id) @ 25°C :
30A (Tc)
Rds On (Max) @ Id, Vgs :
6.35 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id :
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
20.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
950pF @ 12.5V
Power - Max :
16.7W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Package / Case :
8-PowerWDFN
Supplier Device Package :
8-Power33 (3x3)
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