DD250S65K3NOSA1 Pricing (USD) [53pcs Stock]
- 1 pcs$662.63358
- Part Number:
- DD250S65K3NOSA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- IGBT MODULE VCES 6500V 250A.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - FETs, MOSFETs - Arrays, Diodes - Variable Capacitance (Varicaps, Varactors), Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Single, Pre-Biased and Transistors - IGBTs - Single ...
- Competitive Advantage:
- We specialize in Infineon Technologies DD250S65K3NOSA1 electronic components. DD250S65K3NOSA1 can be shipped within 24 hours after order. If you have any demands for DD250S65K3NOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DD250S65K3NOSA1 Product Attributes
Part Number :
DD250S65K3NOSA1
Manufacturer :
Infineon Technologies
Description :
IGBT MODULE VCES 6500V 250A
Series :
-
Part Status :
Active
Diode Configuration :
2 Independent
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
6500V
Current - Average Rectified (Io) (per Diode) :
-
Voltage - Forward (Vf) (Max) @ If :
3.5V @ 250A
Speed :
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
-
Current - Reverse Leakage @ Vr :
370A @ 3600V
Operating Temperature - Junction :
-50°C ~ 125°C
Mounting Type :
Chassis Mount
Package / Case :
Module
Supplier Device Package :
A-IHV130-6
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