IRG8CH37K10F Pricing (USD) [25479pcs Stock]
- 1 pcs$2.85133
- Part Number:
- IRG8CH37K10F
- Manufacturer:
- Infineon Technologies
- Detailed description:
- IGBT 1200V 100A DIE.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Thyristors - SCRs - Modules, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single and Transistors - JFETs ...
- Competitive Advantage:
- We specialize in Infineon Technologies IRG8CH37K10F electronic components. IRG8CH37K10F can be shipped within 24 hours after order. If you have any demands for IRG8CH37K10F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRG8CH37K10F Product Attributes
Part Number :
IRG8CH37K10F
Manufacturer :
Infineon Technologies
Description :
IGBT 1200V 100A DIE
Series :
-
Part Status :
Active
IGBT Type :
-
Voltage - Collector Emitter Breakdown (Max) :
1200V
Current - Collector (Ic) (Max) :
-
Current - Collector Pulsed (Icm) :
-
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 35A
Power - Max :
-
Switching Energy :
-
Input Type :
Standard
Gate Charge :
210nC
Td (on/off) @ 25°C :
35ns/190ns
Test Condition :
600V, 35A, 5 Ohm, 15V
Reverse Recovery Time (trr) :
-
Operating Temperature :
-
Mounting Type :
-
Package / Case :
-
Supplier Device Package :
-
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