Toshiba Semiconductor and Storage - RN1308,LF

KEY Part #: K6527398

RN1308,LF Pricing (USD) [2910718pcs Stock]

  • 1 pcs$0.01277
  • 3,000 pcs$0.01271
  • 6,000 pcs$0.01146
  • 15,000 pcs$0.00997
  • 30,000 pcs$0.00897
  • 75,000 pcs$0.00797
  • 150,000 pcs$0.00664

Part Number:
RN1308,LF
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
TRANS PREBIAS NPN 0.1W USM.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - Single, Thyristors - SCRs, Transistors - FETs, MOSFETs - RF, Power Driver Modules, Thyristors - TRIACs, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - Bipolar (BJT) - Arrays, Pre-Biased and Thyristors - DIACs, SIDACs ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage RN1308,LF electronic components. RN1308,LF can be shipped within 24 hours after order. If you have any demands for RN1308,LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN1308,LF Product Attributes

Part Number : RN1308,LF
Manufacturer : Toshiba Semiconductor and Storage
Description : TRANS PREBIAS NPN 0.1W USM
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 22 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 250MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : USM

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