Infineon Technologies - DD750S65K3NOSA1

KEY Part #: K6472300

DD750S65K3NOSA1 Pricing (USD) [39pcs Stock]

  • 1 pcs$890.87720

Part Number:
DD750S65K3NOSA1
Manufacturer:
Infineon Technologies
Detailed description:
IGBT MODULE VCES 6500V 750A.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF, Transistors - Programmable Unijunction, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - IGBTs - Arrays, Transistors - IGBTs - Modules, Transistors - FETs, MOSFETs - Single and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
Competitive Advantage:
We specialize in Infineon Technologies DD750S65K3NOSA1 electronic components. DD750S65K3NOSA1 can be shipped within 24 hours after order. If you have any demands for DD750S65K3NOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DD750S65K3NOSA1 Product Attributes

Part Number : DD750S65K3NOSA1
Manufacturer : Infineon Technologies
Description : IGBT MODULE VCES 6500V 750A
Series : -
Part Status : Active
Diode Configuration : 2 Independent
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 6500V
Current - Average Rectified (Io) (per Diode) : -
Voltage - Forward (Vf) (Max) @ If : 3.5V @ 750A
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : -
Current - Reverse Leakage @ Vr : 1100A @ 3600V
Operating Temperature - Junction : -50°C ~ 125°C
Mounting Type : Chassis Mount
Package / Case : Module
Supplier Device Package : A-IHV130-6

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