Microsemi Corporation - JAN1N5811US

KEY Part #: K6427766

JAN1N5811US Pricing (USD) [9400pcs Stock]

1 pcs$4.66293
100 pcs$4.63973

Part Number:: JAN1N5811US

Manufacturer:: Microsemi Corporation

Detailed description:: DIODE GEN PURP 150V 6A B-MELF. ESD Suppressors / TVS Diodes D MET 6A SFST 150V HR SM

Manufacturer's standard lead time:: In stock

Shelf life:: One Year

Chip From:: Hong Kong

RoHS:

Payment method:

Shipment way:

Family Categories:: KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Single, Thyristors - TRIACs, Transistors - Bipolar (BJT) - RF, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Arrays, Thyristors - SCRs - Modules, Transistors - Programmable Unijunction and Diodes - Variable Capacitance (Varicaps, Varactors) ...

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GB-T-27922

ISO-9001-2015

ISO-13485

ISO-14001

ISO-28000-2007

ISO-45001-2018

JAN1N5811US Product Attributes

Part Number : JAN1N5811US

Manufacturer : Microsemi Corporation

Description : DIODE GEN PURP 150V 6A B-MELF

Series : Military, MIL-PRF-19500/477

Part Status : Active

Diode Type : Standard

Voltage - DC Reverse (Vr) (Max) : 150V

Current - Average Rectified (Io) : 6A

Voltage - Forward (Vf) (Max) @ If : 875mV @ 4A

Speed : Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr) : 30ns

Current - Reverse Leakage @ Vr : 5µA @ 150V

Capacitance @ Vr, F : 60pF @ 10V, 1MHz

Mounting Type : Surface Mount

Package / Case : SQ-MELF, B

Supplier Device Package : B, SQ-MELF

Operating Temperature - Junction : -65°C ~ 175°C

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