IDB30E120ATMA1 Pricing (USD) [69605pcs Stock]
- 1 pcs$0.56175
- 1,000 pcs$0.40580
- 2,000 pcs$0.37782
- 5,000 pcs$0.37315
- Part Number:
- IDB30E120ATMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- DIODE GEN PURP 1.2KV 50A TO263-3. Diodes - General Purpose, Power, Switching FAST SWITCH EMCON DIODE 1200V 30A
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - SCRs, Thyristors - SCRs - Modules, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Single, Transistors - JFETs, Transistors - Special Purpose, Diodes - Zener - Arrays and Transistors - Bipolar (BJT) - Arrays, Pre-Biased ...
- Competitive Advantage:
- We specialize in Infineon Technologies IDB30E120ATMA1 electronic components. IDB30E120ATMA1 can be shipped within 24 hours after order. If you have any demands for IDB30E120ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IDB30E120ATMA1 Product Attributes
Part Number :
IDB30E120ATMA1
Manufacturer :
Infineon Technologies
Description :
DIODE GEN PURP 1.2KV 50A TO263-3
Series :
-
Part Status :
Active
Diode Type :
Standard
Voltage - DC Reverse (Vr) (Max) :
1200V
Current - Average Rectified (Io) :
50A (DC)
Voltage - Forward (Vf) (Max) @ If :
2.15V @ 30A
Speed :
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) :
243ns
Current - Reverse Leakage @ Vr :
100µA @ 1200V
Capacitance @ Vr, F :
-
Mounting Type :
Surface Mount
Package / Case :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package :
PG-TO263-3
Operating Temperature - Junction :
-55°C ~ 150°C
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