Renesas Electronics America - RJS6004WDPK-00#T0

KEY Part #: K6476027

[5901pcs Stock]


    Part Number:
    RJS6004WDPK-00#T0
    Manufacturer:
    Renesas Electronics America
    Detailed description:
    DIODE GEN PURP 600V 20A. Diodes - General Purpose, Power, Switching SiC SBD - 600V/20A/10A, TO-3PSG pkg
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, Thyristors - TRIACs, Transistors - IGBTs - Single and Transistors - FETs, MOSFETs - Arrays ...
    Competitive Advantage:
    We specialize in Renesas Electronics America RJS6004WDPK-00#T0 electronic components. RJS6004WDPK-00#T0 can be shipped within 24 hours after order. If you have any demands for RJS6004WDPK-00#T0, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    RJS6004WDPK-00#T0 Product Attributes

    Part Number : RJS6004WDPK-00#T0
    Manufacturer : Renesas Electronics America
    Description : DIODE GEN PURP 600V 20A
    Series : -
    Part Status : Last Time Buy
    Diode Configuration : 1 Pair Common Cathode
    Diode Type : Schottky
    Voltage - DC Reverse (Vr) (Max) : 600V
    Current - Average Rectified (Io) (per Diode) : 10A (DC)
    Voltage - Forward (Vf) (Max) @ If : 1.8V @ 10A
    Speed : Fast Recovery =< 500ns, > 200mA (Io)
    Reverse Recovery Time (trr) : 15ns
    Current - Reverse Leakage @ Vr : 10µA @ 600V
    Operating Temperature - Junction : -55°C ~ 150°C
    Mounting Type : Through Hole
    Package / Case : TO-220-3 Full Pack
    Supplier Device Package : TO-3P

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