Global Power Technologies Group - GP1M003A090PH

KEY Part #: K6402632

[2636pcs Stock]


    Part Number:
    GP1M003A090PH
    Manufacturer:
    Global Power Technologies Group
    Detailed description:
    MOSFET N-CH 900V 2.5A IPAK.
    Manufacturer's standard lead time:
    In stock
    Shelf life:
    One Year
    Chip From:
    Hong Kong
    RoHS:
    Payment method:
    Shipment way:
    Family Categories:
    KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Single, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - Single, Pre-Biased, Diodes - Rectifiers - Single, Transistors - Programmable Unijunction, Transistors - FETs, MOSFETs - Arrays, Thyristors - DIACs, SIDACs and Power Driver Modules ...
    Competitive Advantage:
    We specialize in Global Power Technologies Group GP1M003A090PH electronic components. GP1M003A090PH can be shipped within 24 hours after order. If you have any demands for GP1M003A090PH, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    GP1M003A090PH Product Attributes

    Part Number : GP1M003A090PH
    Manufacturer : Global Power Technologies Group
    Description : MOSFET N-CH 900V 2.5A IPAK
    Series : -
    Part Status : Obsolete
    FET Type : N-Channel
    Technology : MOSFET (Metal Oxide)
    Drain to Source Voltage (Vdss) : 900V
    Current - Continuous Drain (Id) @ 25°C : 2.5A (Tc)
    Drive Voltage (Max Rds On, Min Rds On) : 10V
    Rds On (Max) @ Id, Vgs : 5.1 Ohm @ 1.25A, 10V
    Vgs(th) (Max) @ Id : 4V @ 250µA
    Gate Charge (Qg) (Max) @ Vgs : 17nC @ 10V
    Vgs (Max) : ±30V
    Input Capacitance (Ciss) (Max) @ Vds : 748pF @ 25V
    FET Feature : -
    Power Dissipation (Max) : 94W (Tc)
    Operating Temperature : -55°C ~ 150°C (TJ)
    Mounting Type : Through Hole
    Supplier Device Package : I-PAK
    Package / Case : TO-251-3 Short Leads, IPak, TO-251AA

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