DF11MR12W1M1B11BOMA1 Pricing (USD) [695pcs Stock]
- 1 pcs$66.80379
- Part Number:
- DF11MR12W1M1B11BOMA1
- Manufacturer:
- Infineon Technologies
- Detailed description:
- MOSFET MODULE 1200V 50A.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Arrays, Thyristors - TRIACs, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - FETs, MOSFETs - Arrays, Transistors - Bipolar (BJT) - Single and Diodes - RF ...
- Competitive Advantage:
- We specialize in Infineon Technologies DF11MR12W1M1B11BOMA1 electronic components. DF11MR12W1M1B11BOMA1 can be shipped within 24 hours after order. If you have any demands for DF11MR12W1M1B11BOMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DF11MR12W1M1B11BOMA1 Product Attributes
Part Number :
DF11MR12W1M1B11BOMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET MODULE 1200V 50A
Series :
CoolSiC™
Part Status :
Obsolete
FET Type :
2 N-Channel (Dual)
FET Feature :
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) :
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C :
50A
Rds On (Max) @ Id, Vgs :
23 mOhm @ 50A, 15V
Vgs(th) (Max) @ Id :
5.5V @ 20mA
Gate Charge (Qg) (Max) @ Vgs :
125nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds :
3950pF @ 800V
Power - Max :
20mW
Operating Temperature :
-40°C ~ 150°C (TJ)
Mounting Type :
Chassis Mount
Package / Case :
Module
Supplier Device Package :
Module
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