SSVMUN5312DW1T2G Pricing (USD) [877311pcs Stock]
- 1 pcs$0.04216
- 6,000 pcs$0.03981
- Part Number:
- SSVMUN5312DW1T2G
- Manufacturer:
- ON Semiconductor
- Detailed description:
- TRANS BRT DUAL 100MA 50V SOT363.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Arrays, Diodes - Rectifiers - Arrays, Diodes - Rectifiers - Single and Transistors - IGBTs - Arrays ...
- Competitive Advantage:
- We specialize in ON Semiconductor SSVMUN5312DW1T2G electronic components. SSVMUN5312DW1T2G can be shipped within 24 hours after order. If you have any demands for SSVMUN5312DW1T2G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSVMUN5312DW1T2G Product Attributes
Part Number :
SSVMUN5312DW1T2G
Manufacturer :
ON Semiconductor
Description :
TRANS BRT DUAL 100MA 50V SOT363
Series :
-
Part Status :
Active
Transistor Type :
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max) :
100mA
Voltage - Collector Emitter Breakdown (Max) :
50V
Resistor - Base (R1) :
22 kOhms
Resistor - Emitter Base (R2) :
22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic :
250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) :
500nA
Frequency - Transition :
-
Power - Max :
187mW
Mounting Type :
Surface Mount
Package / Case :
6-TSSOP, SC-88, SOT-363
Supplier Device Package :
SC-88/SC70-6/SOT-363
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