Vishay Siliconix - IRFD224PBF

KEY Part #: K6392917

IRFD224PBF Pricing (USD) [56337pcs Stock]

  • 1 pcs$0.69405
  • 2,500 pcs$0.26190

Part Number:
IRFD224PBF
Manufacturer:
Vishay Siliconix
Detailed description:
MOSFET N-CH 250V 630MA 4-DIP.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Diodes - Zener - Single, Diodes - RF, Thyristors - SCRs, Transistors - Special Purpose, Thyristors - DIACs, SIDACs, Diodes - Variable Capacitance (Varicaps, Varactors) and Diodes - Zener - Arrays ...
Competitive Advantage:
We specialize in Vishay Siliconix IRFD224PBF electronic components. IRFD224PBF can be shipped within 24 hours after order. If you have any demands for IRFD224PBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRFD224PBF Product Attributes

Part Number : IRFD224PBF
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 250V 630MA 4-DIP
Series : -
Part Status : Active
FET Type : N-Channel
Technology : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 250V
Current - Continuous Drain (Id) @ 25°C : 630mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 1.1 Ohm @ 380mA, 10V
Vgs(th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 14nC @ 10V
Vgs (Max) : ±20V
Input Capacitance (Ciss) (Max) @ Vds : 260pF @ 25V
FET Feature : -
Power Dissipation (Max) : 1W (Ta)
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Through Hole
Supplier Device Package : 4-DIP, Hexdip, HVMDIP
Package / Case : 4-DIP (0.300", 7.62mm)

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