Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 250V 630MA 4-DIP
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
250V
Current - Continuous Drain (Id) @ 25°C :
630mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.1 Ohm @ 380mA, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds :
260pF @ 25V
Power Dissipation (Max) :
1W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
4-DIP, Hexdip, HVMDIP
Package / Case :
4-DIP (0.300", 7.62mm)