IRFD224PBF Pricing (USD) [56337pcs Stock]
- 1 pcs$0.69405
- 2,500 pcs$0.26190
- Part Number:
- IRFD224PBF
- Manufacturer:
- Vishay Siliconix
- Detailed description:
- MOSFET N-CH 250V 630MA 4-DIP.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Variable Capacitance (Varicaps, Varactors), Diodes - RF, Transistors - FETs, MOSFETs - RF, Thyristors - TRIACs, Diodes - Rectifiers - Arrays, Thyristors - SCRs, Transistors - IGBTs - Arrays and Transistors - Bipolar (BJT) - Single, Pre-Biased ...
- Competitive Advantage:
- We specialize in Vishay Siliconix IRFD224PBF electronic components. IRFD224PBF can be shipped within 24 hours after order. If you have any demands for IRFD224PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFD224PBF Product Attributes
Part Number :
IRFD224PBF
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 250V 630MA 4-DIP
Series :
-
Part Status :
Active
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
250V
Current - Continuous Drain (Id) @ 25°C :
630mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.1 Ohm @ 380mA, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
260pF @ 25V
FET Feature :
-
Power Dissipation (Max) :
1W (Ta)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Through Hole
Supplier Device Package :
4-DIP, Hexdip, HVMDIP
Package / Case :
4-DIP (0.300", 7.62mm)
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