[3126pcs Stock]
- Part Number:
- PMV130ENEA/DG/B2R
- Manufacturer:
- Nexperia USA Inc.
- Detailed description:
- MOSFET N-CH 40V 2.1A TO236AB.
- Manufacturer's standard lead time:
- In stock
- Shelf life:
- One Year
- Chip From:
- Hong Kong
- RoHS:
- Payment method:
-
- Shipment way:
- Family Categories:
- KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Single, Pre-Biased, Transistors - IGBTs - Modules, Diodes - Bridge Rectifiers, Power Driver Modules, Transistors - FETs, MOSFETs - RF, Thyristors - TRIACs, Diodes - Rectifiers - Arrays and Transistors - Bipolar (BJT) - RF ...
- Competitive Advantage:
- We specialize in Nexperia USA Inc. PMV130ENEA/DG/B2R electronic components. PMV130ENEA/DG/B2R can be shipped within 24 hours after order. If you have any demands for PMV130ENEA/DG/B2R, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
PMV130ENEA/DG/B2R Product Attributes
Part Number :
PMV130ENEA/DG/B2R
Manufacturer :
Nexperia USA Inc.
Description :
MOSFET N-CH 40V 2.1A TO236AB
Series :
Automotive, AEC-Q101
Part Status :
Obsolete
FET Type :
N-Channel
Technology :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Current - Continuous Drain (Id) @ 25°C :
2.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
120 mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
3.6nC @ 10V
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
170pF @ 20V
FET Feature :
-
Power Dissipation (Max) :
5W (Tc)
Operating Temperature :
-55°C ~ 150°C (TJ)
Mounting Type :
Surface Mount
Supplier Device Package :
TO-236AB
Package / Case :
TO-236-3, SC-59, SOT-23-3
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