Microsemi Corporation - APT35GP120J

KEY Part #: K6532634

APT35GP120J Pricing (USD) [2421pcs Stock]

  • 1 pcs$17.89265
  • 10 pcs$16.54954
  • 25 pcs$15.20773
  • 100 pcs$14.13417
  • 250 pcs$12.97123

Part Number:
APT35GP120J
Manufacturer:
Microsemi Corporation
Detailed description:
IGBT 1200V 64A 284W SOT227.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Programmable Unijunction, Thyristors - SCRs, Thyristors - DIACs, SIDACs, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Single, Thyristors - TRIACs, Transistors - FETs, MOSFETs - RF and Transistors - IGBTs - Single ...
Competitive Advantage:
We specialize in Microsemi Corporation APT35GP120J electronic components. APT35GP120J can be shipped within 24 hours after order. If you have any demands for APT35GP120J, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT35GP120J Product Attributes

Part Number : APT35GP120J
Manufacturer : Microsemi Corporation
Description : IGBT 1200V 64A 284W SOT227
Series : POWER MOS 7®
Part Status : Active
IGBT Type : PT
Configuration : Single
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 64A
Power - Max : 284W
Vce(on) (Max) @ Vge, Ic : 3.9V @ 15V, 35A
Current - Collector Cutoff (Max) : 250µA
Input Capacitance (Cies) @ Vce : 3.24nF @ 25V
Input : Standard
NTC Thermistor : No
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Chassis Mount
Package / Case : ISOTOP
Supplier Device Package : ISOTOP®

You May Also Be Interested In
  • VS-ETF150Y65N

    Vishay Semiconductor Diodes Division

    IGBT 650V 150A EMIPAK-2B.

  • CPV363M4K

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 6A IMS-2.

  • CPV362M4K

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 31 IMS-2.

  • CPV362M4U

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 3.9A IMS-2.

  • CPV363M4U

    Vishay Semiconductor Diodes Division

    IGBT SIP MODULE 600V 6.8A IMS-2.

  • A2C25S12M3-F

    STMicroelectronics

    IGBT TRENCH 1200V 25A ACEPACK2.