Toshiba Semiconductor and Storage - RN1306,LF

KEY Part #: K6527477

RN1306,LF Pricing (USD) [2686624pcs Stock]

  • 1 pcs$0.01384
  • 3,000 pcs$0.01377
  • 6,000 pcs$0.01242
  • 15,000 pcs$0.01080
  • 30,000 pcs$0.00972
  • 75,000 pcs$0.00864
  • 150,000 pcs$0.00720

Part Number:
RN1306,LF
Manufacturer:
Toshiba Semiconductor and Storage
Detailed description:
TRANS PREBIAS NPN 0.1W USM.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Programmable Unijunction, Transistors - JFETs, Transistors - FETs, MOSFETs - RF, Diodes - Zener - Arrays, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Modules and Transistors - IGBTs - Arrays ...
Competitive Advantage:
We specialize in Toshiba Semiconductor and Storage RN1306,LF electronic components. RN1306,LF can be shipped within 24 hours after order. If you have any demands for RN1306,LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RN1306,LF Product Attributes

Part Number : RN1306,LF
Manufacturer : Toshiba Semiconductor and Storage
Description : TRANS PREBIAS NPN 0.1W USM
Series : -
Part Status : Active
Transistor Type : NPN - Pre-Biased
Current - Collector (Ic) (Max) : 100mA
Voltage - Collector Emitter Breakdown (Max) : 50V
Resistor - Base (R1) : 4.7 kOhms
Resistor - Emitter Base (R2) : 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce : 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic : 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) : 500nA
Frequency - Transition : 250MHz
Power - Max : 100mW
Mounting Type : Surface Mount
Package / Case : SC-70, SOT-323
Supplier Device Package : USM

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