Infineon Technologies - SGB15N120ATMA1

KEY Part #: K6424822

SGB15N120ATMA1 Pricing (USD) [32036pcs Stock]

  • 1 pcs$1.28646
  • 1,000 pcs$0.99910

Part Number:
SGB15N120ATMA1
Manufacturer:
Infineon Technologies
Detailed description:
IGBT 1200V 30A 198W TO263-3.
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Thyristors - DIACs, SIDACs, Power Driver Modules, Transistors - Bipolar (BJT) - RF, Diodes - RF, Transistors - Bipolar (BJT) - Arrays, Transistors - IGBTs - Single, Thyristors - SCRs - Modules and Transistors - IGBTs - Modules ...
Competitive Advantage:
We specialize in Infineon Technologies SGB15N120ATMA1 electronic components. SGB15N120ATMA1 can be shipped within 24 hours after order. If you have any demands for SGB15N120ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SGB15N120ATMA1 Product Attributes

Part Number : SGB15N120ATMA1
Manufacturer : Infineon Technologies
Description : IGBT 1200V 30A 198W TO263-3
Series : -
Part Status : Not For New Designs
IGBT Type : NPT
Voltage - Collector Emitter Breakdown (Max) : 1200V
Current - Collector (Ic) (Max) : 30A
Current - Collector Pulsed (Icm) : 52A
Vce(on) (Max) @ Vge, Ic : 3.6V @ 15V, 15A
Power - Max : 198W
Switching Energy : 1.9mJ
Input Type : Standard
Gate Charge : 130nC
Td (on/off) @ 25°C : 18ns/580ns
Test Condition : 800V, 15A, 33 Ohm, 15V
Reverse Recovery Time (trr) : -
Operating Temperature : -55°C ~ 150°C (TJ)
Mounting Type : Surface Mount
Package / Case : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package : PG-TO263-3