Microsemi Corporation - JAN1N4153-1

KEY Part #: K6427774

JAN1N4153-1 Pricing (USD) [15631pcs Stock]

  • 1 pcs$4.13377
  • 10 pcs$3.71951
  • 25 pcs$3.38881
  • 100 pcs$3.05819
  • 250 pcs$2.81022
  • 500 pcs$2.56226

Part Number:
JAN1N4153-1
Manufacturer:
Microsemi Corporation
Detailed description:
DIODE GEN PURP 75V 150MA DO35. Diodes - General Purpose, Power, Switching Switching Diode
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - IGBTs - Arrays, Transistors - IGBTs - Single, Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers - Arrays, Diodes - Bridge Rectifiers, Power Driver Modules, Transistors - FETs, MOSFETs - RF and Transistors - Bipolar (BJT) - Arrays ...
Competitive Advantage:
We specialize in Microsemi Corporation JAN1N4153-1 electronic components. JAN1N4153-1 can be shipped within 24 hours after order. If you have any demands for JAN1N4153-1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JAN1N4153-1 Product Attributes

Part Number : JAN1N4153-1
Manufacturer : Microsemi Corporation
Description : DIODE GEN PURP 75V 150MA DO35
Series : Military, MIL-PRF-19500/337
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 75V
Current - Average Rectified (Io) : 150mA (DC)
Voltage - Forward (Vf) (Max) @ If : 880mV @ 20mA
Speed : Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) : 4ns
Current - Reverse Leakage @ Vr : 50nA @ 50V
Capacitance @ Vr, F : 2pF @ 0V, 1MHz
Mounting Type : Through Hole
Package / Case : DO-204AH, DO-35, Axial
Supplier Device Package : DO-35
Operating Temperature - Junction : -65°C ~ 175°C

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