Vishay Semiconductor Diodes Division - US1M-E3/61T

KEY Part #: K6457523

US1M-E3/61T Pricing (USD) [766693pcs Stock]

  • 1 pcs$0.04824
  • 1,800 pcs$0.04128
  • 3,600 pcs$0.03715
  • 5,400 pcs$0.03508
  • 12,600 pcs$0.03199
  • 45,000 pcs$0.02993

Part Number:
US1M-E3/61T
Manufacturer:
Vishay Semiconductor Diodes Division
Detailed description:
DIODE GEN PURP 1KV 1A DO214AC. Rectifiers 1.0 Amp 1000 Volt
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Diodes - Zener - Arrays, Transistors - Programmable Unijunction, Power Driver Modules, Thyristors - DIACs, SIDACs, Transistors - Bipolar (BJT) - Arrays, Pre-Biased, Transistors - Special Purpose, Thyristors - TRIACs and Transistors - IGBTs - Modules ...
Competitive Advantage:
We specialize in Vishay Semiconductor Diodes Division US1M-E3/61T electronic components. US1M-E3/61T can be shipped within 24 hours after order. If you have any demands for US1M-E3/61T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

US1M-E3/61T Product Attributes

Part Number : US1M-E3/61T
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 1KV 1A DO214AC
Series : -
Part Status : Active
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 1000V
Current - Average Rectified (Io) : 1A
Voltage - Forward (Vf) (Max) @ If : 1.7V @ 1A
Speed : Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 75ns
Current - Reverse Leakage @ Vr : 10µA @ 1000V
Capacitance @ Vr, F : 10pF @ 4V, 1MHz
Mounting Type : Surface Mount
Package / Case : DO-214AC, SMA
Supplier Device Package : DO-214AC (SMA)
Operating Temperature - Junction : -55°C ~ 150°C

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