Infineon Technologies - BAS116E6433HTMA1

KEY Part #: K6458665

BAS116E6433HTMA1 Pricing (USD) [3737866pcs Stock]

  • 1 pcs$0.01160
  • 10,000 pcs$0.01154

Part Number:
BAS116E6433HTMA1
Manufacturer:
Infineon Technologies
Detailed description:
DIODE GEN PURP 80V 250MA SOT23-3. Diodes - General Purpose, Power, Switching Silicon Low Leakage Diode
Manufacturer's standard lead time:
In stock
Shelf life:
One Year
Chip From:
Hong Kong
RoHS:
Payment method:
Shipment way:
Family Categories:
KEY Components Co.,LTD is a Electronic Components Distributor who offers product categories including : Transistors - FETs, MOSFETs - RF, Transistors - JFETs, Diodes - Zener - Single, Thyristors - SCRs - Modules, Transistors - Bipolar (BJT) - RF, Diodes - Variable Capacitance (Varicaps, Varactors), Transistors - IGBTs - Single and Diodes - Rectifiers - Arrays ...
Competitive Advantage:
We specialize in Infineon Technologies BAS116E6433HTMA1 electronic components. BAS116E6433HTMA1 can be shipped within 24 hours after order. If you have any demands for BAS116E6433HTMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAS116E6433HTMA1 Product Attributes

Part Number : BAS116E6433HTMA1
Manufacturer : Infineon Technologies
Description : DIODE GEN PURP 80V 250MA SOT23-3
Series : -
Part Status : Last Time Buy
Diode Type : Standard
Voltage - DC Reverse (Vr) (Max) : 80V
Current - Average Rectified (Io) : 250mA (DC)
Voltage - Forward (Vf) (Max) @ If : 1.25V @ 150mA
Speed : Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) : 1.5µs
Current - Reverse Leakage @ Vr : 5nA @ 75V
Capacitance @ Vr, F : 2pF @ 0V, 1MHz
Mounting Type : Surface Mount
Package / Case : TO-236-3, SC-59, SOT-23-3
Supplier Device Package : SOT-23-3
Operating Temperature - Junction : 150°C (Max)

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